Electronic Components IGBT Transistor 40t120fes Mbq40t120fes
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US$1.23 - 2.00
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Key attributes
Customization
Available
Certification
RoHS, CE, ISO, CCC
Encapsulation Structure
Chip Transistor
Model No.
40T120FES
Installation
SMD Triode
Working Frequency
Low Frequency
Power Level
High Power
Function
Photosensitive, Darlington Tube, Power Triode, Switching Triode
Structure
Diffusion
Material
Silicon
Operating Temperature Range
-40°c ~ +85°c
Storage Temperature
-65°c ~ +150°c
Esd Protection
≥2000V
Mtbf
>100000h
Transport Package
/
Specification
/
Trademark
/
Origin
/
| Customization | Available |
|---|---|
| Certification | RoHS, CE, ISO, CCC |
| Encapsulation Structure | Chip Transistor |
| Model No. | 40T120FES |
| Installation | SMD Triode |
| Working Frequency | Low Frequency |
| Power Level | High Power |
| Function | Photosensitive, Darlington Tube, Power Triode, Switching Triode |
| Structure | Diffusion |
| Material | Silicon |
|---|---|
| Operating Temperature Range | -40°c ~ +85°c |
| Storage Temperature | -65°c ~ +150°c |
| Esd Protection | ≥2000V |
| Mtbf | >100000h |
| Transport Package | / |
| Specification | / |
| Trademark | / |
| Origin | / |
Packaging and delivery
| Selling Units | Single item |
|---|---|
| Package Type | Standard export packaging |
| Lead Time | 7-14 days after payment |
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Quality Assurance
Products are verified before shipment. Contact us within 7 days if you receive defective items.
Buyer Protection
Full refund if product is not as described or doesn't arrive on time.
Supplier
🏭
Shengxinweiye (Shenzhen) Co., Ltd